(Hong Kong)
Product Summary
The CEM4435 is a P-channel enhancement mode field effect transistor.
Parametrics
CEM4435 absolute maximum ratings: (1)drain-source voltage: -30 V; (2)gate-sourve voltage: ±20 V; (3)drain current-continous @ TJ=125-pulsed: ±8 A; (4)drain-source diode forward current: -2.1 A; (5)maximum power dissipation: 2.5 W; (6)operating junction and storage temperature range: -55 to 150 ℃.
Features
CEM4435 features: (1)-30 V, -8 A, RDS(ON)=20mΩ @ VGS=-10 V, -5 A, RDS(ON)=35mΩ @ VGS=-4.5 V; (2)super high dense cell design for extremely low RDS(ON); (3)high power and current handing capability; (4)surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 CEM4435A |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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