Product Summary

The IRF540 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRF540 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 28 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 20 A; (3)pulse drain current: 110 A; (4)power dissipation: 150 W; (5)linear derating factor: 1.0 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 230 mJ; (8)peak diode recovery dv/dt: 5.5 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.

Features

IRF540 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)175℃ operating temperarure; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.

Diagrams

IRF540 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF540
IRF540
Vishay/Siliconix
MOSFET N-Chan 100V 28 Amp
Data Sheet
0-1: $2.82
1-10: $2.51
10-100: $2.21
100-250: $2.08
IRF540, SiHF540
IRF540, SiHF540
Other

Data Sheet
Negotiable 
IRF540,127
IRF540,127

MOSFET N-CH 100V 23A TO-220AB
Data Sheet
Negotiable 
IRF540_R4941
IRF540_R4941
Fairchild Semiconductor
MOSFET USE 512-IRF540A
Data Sheet
Negotiable 
IRF540A
IRF540A
Fairchild Semiconductor
MOSFET TO-220 N-Ch A-FET
Data Sheet
Negotiable 
IRF540L
IRF540L

MOSFET N-CH 100V 28A TO-262
Data Sheet
0-300: $1.01
IRF540N
IRF540N
International Rectifier
MOSFET N-CH 100V 33A TO-220AB
Data Sheet
1-350: $0.80
IRF540N_R4942
IRF540N_R4942
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable