Product Summary

The IRF540 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRF540 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 28 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 20 A; (3)pulse drain current: 110 A; (4)power dissipation: 150 W; (5)linear derating factor: 1.0 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 230 mJ; (8)peak diode recovery dv/dt: 5.5 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.

Features

IRF540 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)175℃ operating temperarure; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.

Diagrams

IRF540 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF540_R4941
IRF540_R4941
Fairchild Semiconductor
MOSFET USE 512-IRF540A
Data Sheet
Negotiable 
IRF540N
IRF540N
International Rectifier
MOSFET N-CH 100V 33A TO-220AB
Data Sheet
1-350: $0.80
IRF540N_R4942
IRF540N_R4942
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable 
IRF540NL
IRF540NL

MOSFET N-CH 100V 33A TO-262
Data Sheet
Negotiable 
IRF540NLPBF
IRF540NLPBF
International Rectifier
MOSFET MOSFT 100V 33A 44mOhm 47.3nC
Data Sheet
0-1: $1.51
1-25: $0.97
25-100: $0.70
100-250: $0.66
IRF540NPBF
IRF540NPBF
International Rectifier
MOSFET MOSFT 100V 33A 44mOhm 47.3nC
Data Sheet
0-1: $1.41
1-25: $0.91
25-100: $0.66
100-250: $0.62
IRF540NS
IRF540NS
International Rectifier
MOSFET N-CH 100V 33A D2PAK
Data Sheet
1-300: $0.87
IRF540NSPBF
IRF540NSPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.73
1-25: $1.12
25-100: $0.74
100-250: $0.73