(Hong Kong)
Product Summary
This Power Mosfet STP60NF06 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. STP60NF06 is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Parametrics
STP60NF06 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0) 60 V; (2)VDGR Drain-gate Voltage (RGS = 20 kW) 60 V; (3)VGS Gate- source Voltage ± 20 V; (4)ID Drain Current (continuos) at TC = 25℃ 60A; (5)ID Drain Current (continuos) at TC = 100℃ 42A; (6)PTOT Total Dissipation at TC = 25℃ 110W; (7)dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns; (8)Tstg Storage Temperature: -65 to 175 ℃.
Features
STP60NF06 features: (1)TYPICAL RDS(on) = 0.014W; (2)EXCEPTIONAL dv/dt CAPABILITY; (3)100% AVALANCHE TESTED; (4)APPLICATION ORIENTED CHARACTERIZATION.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 STP60NF06 |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
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STP60NF06FP |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
Negotiable |
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STP60NF06L |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
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STP60NF06LFP |
STMicroelectronics |
MOSFET N-Ch 60 Volt 60 Amp |
Data Sheet |
Negotiable |
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