IRF1010

HEXFET Power MOSFET, TO-220, Ultra Low On-Resistance, 84 A, 180 mJ

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Price:: US $0.62~0.78 / piece [Get Latest Price]

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	US $0.62~0.78

PartNumber:: IRF1010

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-10-19

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Part Number:IRF1010
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Product Summary

The IRF1010 is a HEXFET Power MOSFET, which is specifically designed for Automotive applications. It utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF1010 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parametrics

IRF1010 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 84 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 60 A; (3)pulse drain current: 75 A; (4)power dissipation: 340 W; (5)linear derating factor: 0.90 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 180 mJ; (8)operating junction and storage temperature range: -55 to +150℃.

Features

IRF1010 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Lead-Free, RoHS Compliant; (7)Automotive Qualified.