(Hong Kong)
Product Summary
The FQPF9N90 is a N-Channel enhancement mode power field effect transistor, which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF9N90 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF9N90 is well suited for high efficiency switched mode power supplies.
Parametrics
FQPF9N90 absolute maximum ratings: (1)Drain-Source Voltage: 900 V; (2)Drain Current - Continuous (TC = 25℃):8.0 A, Continuous (TC = 100℃): 2.8 A; (3)Drain Current - Pulsed: 32 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 900 mJ; (6)Avalanche Current: 8.0 A; (7)Repetitive Avalanche Energy: 20.5 mJ; (8)Peak Diode Recovery dv/dt: 4.0 V/ns; (9)Power Dissipation (TC = 25℃): 68 W, Derate above 25℃: 0.54 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQPF9N90 features: (1)8.0 A, 900V, RDS(on) = 1.4 Ω@VGS = 10 V; (2)Low gate charge ( typical 45nC); (3)Low Crss ( typical 14pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQPF9N90C |
Fairchild Semiconductor |
MOSFET N-CH/900V/8A |
Data Sheet |
Negotiable |
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FQPF9N90CT |
Fairchild Semiconductor |
MOSFET 900V N-Chan Advance Q-FET C-Series |
Data Sheet |
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