(Hong Kong)
Product Summary
The FQPF7N80 is a N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of FQPF7N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF7N80 is well suited for high efficiency switch mode power supplies.
Parametrics
FQPF7N80 absolute maximum ratings: (1)Drain-Source Voltage: 800 V; (2)Drain Current - Continuous (TC = 25℃): 3.8 A, Continuous (TC = 100℃): 2.4 A; (3)Drain Current - Pulsed: 15.2 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 580 mJ; (6)Avalanche Current: 3.8 A; (7)Repetitive Avalanche Energy: 5.6 mJ; (8)Peak Diode Recovery dv/dt: 4.0 V/ns; (9)Power Dissipation (TC = 25℃): 56 W, Derate above 25℃: 0.45 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQPF7N80 features: (1)3.8A, 800V, RDS(on) = 1.5Ω @VGS = 10 V; (2)Low gate charge ( typical 27 nC); (3)Low Crss ( typical 10 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQPF7N80 |
Fairchild Semiconductor |
MOSFET 800V N-Channel QFET |
Data Sheet |
Negotiable |
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FQPF7N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
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