Product Summary

The IRFZ24N is the fifth Generation HEXFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The IRFZ24N also provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFZ24N absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 17 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 12 A; (3)pulse drain current: 68 A; (4)power dissipation: 45 W; (5)linear derating factor: 0.30 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 71 mJ; (8)Avalanche Current: 10 A; (9)Repetitive Avalanche Energy: 4.5 mJ; (10)Peak Diode Recovery dv/dt: 5.0 V/ns; (11)operating junction and storage temperature range: -55 to +150℃.

Features

IRFZ24N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated.

Diagrams

IRFZ24N diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFZ24N
IRFZ24N
International Rectifier
MOSFET N-CH 55V 17A TO-220AB
Data Sheet
1-400: $0.67
IRFZ24N,127
IRFZ24N,127

MOSFET N-CH 55V 17A SOT78
Data Sheet
Negotiable 
IRFZ24NPBF
IRFZ24NPBF
International Rectifier
MOSFET MOSFT 55V 17A 70mOhm 13.3nC
Data Sheet
0-1: $1.07
1-25: $0.65
25-100: $0.45
100-250: $0.43
IRFZ24NLPBF
IRFZ24NLPBF
International Rectifier
MOSFET MOSFT 55V 17A 70mOhm 13.3nC
Data Sheet
0-1: $1.11
1-25: $0.68
25-100: $0.47
100-250: $0.44
IRFZ24NL
IRFZ24NL

MOSFET N-CH 55V 17A TO-262
Data Sheet
0-500: $0.50
IRFZ24NS
IRFZ24NS
International Rectifier
MOSFET N-CH 55V 17A D2PAK
Data Sheet
1-400: $0.67
IRFZ24NSTRLPBF
IRFZ24NSTRLPBF
International Rectifier
MOSFET MOSFT 55V 17A 70mOhm 13.3nC
Data Sheet
0-1: $1.39
1-25: $0.86
25-100: $0.59
100-250: $0.56
IRFZ24NSTRRPBF
IRFZ24NSTRRPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.29
1-25: $0.79
25-100: $0.55
100-250: $0.52