Product Summary
The IRF9540 is the fifth Generation HEXFET from International Rectifier, which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The IRF9540 also provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF9540 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: -23 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: -16 A; (3)pulse drain current: -76 A; (4)power dissipation: 140 W; (5)linear derating factor: 0.91 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 430 mJ; (8)Avalanche Current: -11 A; (9)Repetitive Avalanche Energy: 14 mJ; (10)operating junction and storage temperature range: -55 to +150℃.
Features
IRF9540 features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF9540 |
Vishay/Siliconix |
MOSFET -100V Single P-Channel HEXFET |
Data Sheet |
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IRF9540, SiHF9540 |
Other |
Data Sheet |
Negotiable |
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IRF9540_PDD |
Fairchild Semiconductor |
MOSFET Replaced by SFP9540/P-CH/100V/19A/0.2OHM |
Data Sheet |
Negotiable |
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IRF9540_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB P-Ch Power |
Data Sheet |
Negotiable |
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IRF9540L |
MOSFET P-CH 100V 19A TO-262 |
Data Sheet |
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IRF9540N |
International Rectifier |
MOSFET P-CH 100V 23A TO-220AB |
Data Sheet |
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IRF9540NPBF |
International Rectifier |
MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC |
Data Sheet |
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IRF9540NSTRLPBF |
International Rectifier |
MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC |
Data Sheet |
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