Product Summary

The 2SK2608 is a TOSHIBA field effect transistor.

Parametrics

2SK2608 absolute maximum ratings: (1)Drain-source voltage: 900 V; (2)Drain-gate voltage (RGS = 20 kΩ): 900 V; (3)Gate-source voltage: ±30 V ; (4)Drain current DC: 3 A ; (5)Pulse: 9 A ; (6)Drain power dissipation (Tc = 25℃): 100 W ; (7)Single pulse avalanche energy: 295 mJ ; (8)Avalanche current: 3 A ; (9)Repetitive avalanche energy: 10.0 mJ ; (10)Channel temperature: 150 ℃; (11)Storage temperature range: -55~150 ℃.

Features

2SK2608 features: (1)Low drain-source ON resistance: RDS (ON) = 3.73 Ω (typ.); (2)High forward transfer admittance: |Yfs|= 2.6 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 720 V); (4)Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).

Diagrams

2SK2608 industrial application diagram

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2SK2002-01MR
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2SK2003-01MR
2SK2003-01MR

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2SK2007
2SK2007

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2SK2008
2SK2008

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2SK2009
2SK2009

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2SK2010
2SK2010

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