(Hong Kong)
Product Summary
The 2SK2608 is a TOSHIBA field effect transistor.
Parametrics
2SK2608 absolute maximum ratings: (1)Drain-source voltage: 900 V; (2)Drain-gate voltage (RGS = 20 kΩ): 900 V; (3)Gate-source voltage: ±30 V ; (4)Drain current DC: 3 A ; (5)Pulse: 9 A ; (6)Drain power dissipation (Tc = 25℃): 100 W ; (7)Single pulse avalanche energy: 295 mJ ; (8)Avalanche current: 3 A ; (9)Repetitive avalanche energy: 10.0 mJ ; (10)Channel temperature: 150 ℃; (11)Storage temperature range: -55~150 ℃.
Features
2SK2608 features: (1)Low drain-source ON resistance: RDS (ON) = 3.73 Ω (typ.); (2)High forward transfer admittance: |Yfs|= 2.6 S (typ.); (3)Low leakage current: IDSS = 100 μA (max) (VDS = 720 V); (4)Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SK2608 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
2SK2002-01MR |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2003-01MR |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2007 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2008 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2009 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SK2010 |
Other |
|
Data Sheet |
Negotiable |
|
||||
