(Hong Kong)
Product Summary
The CEM4953 is a dual P-channel enhancement mode MOSFET.
Parametrics
CEM4953 absolute maximum ratings: (1)drain-source voltage: -30 V; (2)gate-sourve voltage: ±20 V; (3)drain current-continous @ TJ=125-pulsed: ±4.9 A; (4)drain-source diode forward current: -1.7 A; (5)maximum power dissipation: 2.0 W; (6)operating junction and storage temperature range: -55 to 150 ℃.
Features
CEM4953 features: (1)-30 V, -4.9 A, RDS(ON)=53mΩ @ VGS=-10 V, -3.6 A, RDS(ON)=95mΩ @ VGS=-4.5 V; (2)super high dense cell design for extremely low RDS(ON); (3)high power and current handing capability; (4)surface mount package.
Diagrams
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Pricing (USD) |
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 CEM4953 |
Other |
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Data Sheet |
Negotiable |
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CEM4953A |
Other |
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Data Sheet |
Negotiable |
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