(Hong Kong)
Product Summary
The CEP3120 is a N-Channel Enhancement Mode Field Effect Transistor.
Parametrics
CEP3120 absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Drain Current-Continuous: 40 A; (4)Drain Current-Pulsed: 160 A; (5)Maximum Power Dissipation @ TC = 25 ℃: 43 W, Derate above 25 ℃: 0.29 W/℃; (6)Operating and Store Temperature Range: -55 to 175 ℃.
Features
CEP3120 features: (1)30V, 40A,RDS(ON) = 15mΩ @VGS = 10V, RDS(ON) = 22mΩ @VGS = 4.5V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)Lead free product is acquired; (5)TO-220 & TO-263 package.
Diagrams
| Image | Part No | Mfg | Description |  |
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 CEP3120 |
Other |
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Data Sheet |
Negotiable |
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CEP3060 |
Other |
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Data Sheet |
Negotiable |
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CEP3070 |
Other |
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Data Sheet |
Negotiable |
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CEP3120 |
Other |
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Data Sheet |
Negotiable |
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CEP3205 |
Other |
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Data Sheet |
Negotiable |
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CEP35P03 |
Other |
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Data Sheet |
Negotiable |
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