Product Summary
The IRFZ44N is an advanced HEXFET Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The IRFZ44N also provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFZ44N absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 49 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 35 A; (3)pulse drain current: 160 A; (4)power dissipation: 95 W; (5)linear derating factor: 0.63 W/℃; (6)gate-to-source voltage: ±20 V; (7)Avalanche Current: 25 A; (8)Repetitive Avalanche Energy: 9.4 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)operating junction and storage temperature range: -55 to +175℃.
Features
IRFZ44N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() IRFZ44N |
![]() International Rectifier |
![]() MOSFET N-CH 55V 49A TO-220AB |
![]() Data Sheet |
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![]() IRFZ44N,127 |
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![]() MOSFET N-CH 55V 49A SOT78 |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFZ44NPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 41A 17.5mOhm 42nC |
![]() Data Sheet |
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![]() IRFZ44NLPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 49A 17.5mOhm 42nC |
![]() Data Sheet |
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![]() IRFZ44N\45B |
![]() Vishay Semiconductors |
![]() MOSFET TO-220 N-CH 55V 49A |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFZ44NL |
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![]() MOSFET N-CH 55V 49A TO-262 |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFZ44NSTRLPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 49A 17.5mOhm 42nC |
![]() Data Sheet |
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![]() IRFZ44NSPBF |
![]() International Rectifier |
![]() MOSFET |
![]() Data Sheet |
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