Product Summary

The IRF630 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRF630 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 9.0 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 5.7 A; (3)pulse drain current: 36 A; (4)power dissipation: 74 W; (5)linear derating factor: 0.59 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 7.4 mJ; (8)peak diode recovery dv/dt: 5.0 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.

Features

IRF630 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.

Diagrams

IRF630 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF630
IRF630
STMicroelectronics
MOSFET N-Ch 200 Volt 10 Amp
Data Sheet
0-1: $0.63
1-10: $0.55
10-100: $0.45
100-250: $0.39
IRF630, SiHF630
IRF630, SiHF630
Other

Data Sheet
Negotiable 
IRF630_R4941
IRF630_R4941
Fairchild Semiconductor
MOSFET TO-220AB N-Ch Power
Data Sheet
Negotiable 
IRF630A
IRF630A
Other

Data Sheet
Negotiable 
IRF630B
IRF630B
Other

Data Sheet
Negotiable 
IRF630B_FP001
IRF630B_FP001
Fairchild Semiconductor
MOSFET 200V Single
Data Sheet
Negotiable 
IRF630BTSTU_FP001
IRF630BTSTU_FP001
Fairchild Semiconductor
MOSFET 200V N-CHAN Short Leads
Data Sheet
Negotiable 
IRF630F
IRF630F
Other

Data Sheet
Negotiable