Product Summary

The IRFZ48N ia advanced HEXFET Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The IRFZ48N also provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFZ48N absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 64 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 45 A; (3)pulse drain current: 210 A; (4)power dissipation: 130 W; (5)linear derating factor: 0.83 W/℃; (6)gate-to-source voltage: ±20 V; (7)Avalanche Current: 32 A; (8)Repetitive Avalanche Energy: 13 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)operating junction and storage temperature range: -55 to +175℃.

Features

IRFZ48N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated.

Diagrams

IRFZ48N diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFZ48N
IRFZ48N

International Rectifier

MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB

Data Sheet

Negotiable 
IRFZ48NL
IRFZ48NL


MOSFET N-CH 55V 64A TO-262

Data Sheet

Negotiable 
IRFZ48NLPBF
IRFZ48NLPBF

International Rectifier

MOSFET MOSFT 55V 64A 14mOhm 54nC

Data Sheet

0-1: $1.31
1-25: $0.85
25-100: $0.56
100-250: $0.55
IRFZ48NPBF
IRFZ48NPBF

International Rectifier

MOSFET MOSFT 55V 64A 14mOhm 54nC

Data Sheet

0-1: $1.41
1-25: $0.91
25-100: $0.66
100-250: $0.62
IRFZ48NSPBF
IRFZ48NSPBF

International Rectifier

MOSFET

Data Sheet

0-1: $1.29
1-25: $0.83
25-100: $0.66
100-250: $0.65
IRFZ48NS
IRFZ48NS


MOSFET N-CH 55V 64A D2PAK

Data Sheet

Negotiable 
IRFZ48NSTRLPBF
IRFZ48NSTRLPBF

International Rectifier

MOSFET MOSFT 55V 64A 14mOhm 54nC

Data Sheet

0-1: $1.73
1-25: $1.12
25-100: $0.80
100-250: $0.75
IRFZ48NSTRRPBF
IRFZ48NSTRRPBF

International Rectifier

MOSFET

Data Sheet

0-1: $1.56
1-25: $1.01
25-100: $0.73
100-250: $0.68