Product Summary

The IRFZ48N ia advanced HEXFET Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The IRFZ48N also provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFZ48N absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 64 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 45 A; (3)pulse drain current: 210 A; (4)power dissipation: 130 W; (5)linear derating factor: 0.83 W/℃; (6)gate-to-source voltage: ±20 V; (7)Avalanche Current: 32 A; (8)Repetitive Avalanche Energy: 13 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)operating junction and storage temperature range: -55 to +175℃.

Features

IRFZ48N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated.

Diagrams

IRFZ48N diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFZ48N
IRFZ48N
International Rectifier
MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB
Data Sheet
Negotiable 
IRFZ48NL
IRFZ48NL

MOSFET N-CH 55V 64A TO-262
Data Sheet
Negotiable 
IRFZ48NLPBF
IRFZ48NLPBF
International Rectifier
MOSFET MOSFT 55V 64A 14mOhm 54nC
Data Sheet
0-1: $1.31
1-25: $0.85
25-100: $0.56
100-250: $0.55
IRFZ48NPBF
IRFZ48NPBF
International Rectifier
MOSFET MOSFT 55V 64A 14mOhm 54nC
Data Sheet
0-1: $1.41
1-25: $0.91
25-100: $0.66
100-250: $0.62
IRFZ48NSPBF
IRFZ48NSPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.29
1-25: $0.83
25-100: $0.66
100-250: $0.65
IRFZ48NS
IRFZ48NS

MOSFET N-CH 55V 64A D2PAK
Data Sheet
Negotiable 
IRFZ48NSTRLPBF
IRFZ48NSTRLPBF
International Rectifier
MOSFET MOSFT 55V 64A 14mOhm 54nC
Data Sheet
0-1: $1.73
1-25: $1.12
25-100: $0.80
100-250: $0.75
IRFZ48NSTRRPBF
IRFZ48NSTRRPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.56
1-25: $1.01
25-100: $0.73
100-250: $0.68