(Hong Kong)
Product Summary
The 2SK3562 is a TOSHIBA Field Effect Transistor.
Parametrics
2SK3562 absolute maximum ratings: (1)Drain-source voltage: 600 V ; (2)Drain-gate voltage (RGS = 20 kΩ): 600 V ; (3)Gate-source voltage: ±30 V ; (4)Drain current DC: 6 A ; (5)Pulse: 24 A ; (6)Drain power dissipation (Tc = 25℃): 40 W ; (7)Single pulse avalanche energy: 345 mJ ; (8)Avalanche current: 6 A ; (9)Repetitive avalanche energy: 4 mJ ; (10)Channel temperature: 150 ℃; (11)Storage temperature range: -55~150 ℃.
Features
2SK3562 features: (1)Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ.); (2)High forward transfer admittance: |Yfs|= 5.0 S (typ.); (3)Low leakage current: IDSS = 600 μA (max) (VDS = 500 V); (4)Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SK3562 |
Other |
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Data Sheet |
Negotiable |
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2SK3562(Q) |
Toshiba |
MOSFET N-Ch 600V 6A Rdson 1.25 Ohm |
Data Sheet |
Negotiable |
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