Product Summary

This STP55NF06 Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size. stripbased process. The resulting STP55NF06 shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parametrics

STP55NF06 absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 60 V; (2)VDGR Drain-gate Voltage (RGS = 20 kW): 60 V; (3)VGS Gate- source Voltage: ± 20 V; (4)ID Drain Current (continuous) at TC = 25℃ 50 A; (5)ID Drain Current (continuous) at TC = 100℃ 35A; (6)IDM Drain Current (pulsed) 200A; (7)Ptot Total Dissipation at TC = 25℃ 110W; (8)Derating Factor 0.73W/℃; (9)dv/dt (1) Peak Diode Recovery voltage slope: 7 V/ns; (10)EAS (2) Single Pulse Avalanche Energy: 350 mJ; (11)Tstg Storage Temperature: -55 to 175 ℃.

Features

STP55NF06 features: (1)TYPICAL RDS(on) = 0.015 W; (2)EXCEPTIONAL dv/dt CAPABILITY; (3)100% AVALANCHE TESTED; (4)SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”); (5)THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX -1).

Diagrams

STP55NF06 INTERNAL SCHEMATIC DIAGRAM

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
STP55NF06
STP55NF06
STMicroelectronics
MOSFET N-Ch 60 Volt 55 Amp
Data Sheet
0-1: $0.76
1-10: $0.64
10-100: $0.52
100-250: $0.46
STP55NF06FP
STP55NF06FP
STMicroelectronics
MOSFET N-Ch 60 Volt 55 Amp
Data Sheet
0-610: $0.58
610-1000: $0.50
1000-2000: $0.47
2000-5000: $0.45
STP55NF06L
STP55NF06L
STMicroelectronics
MOSFET N-Ch 60 Volt 55 Amp
Data Sheet
0-1: $0.89
1-10: $0.74
10-100: $0.61
100-250: $0.55
STP55NF06LFP
STP55NF06LFP
Other

Data Sheet
Negotiable