FQPF8N60

power field effect transistor, TO-220, 600 V, N-Channel, enhancement mode

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Price:: US $0.47~0.62 / piece [Get Latest Price]

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PartNumber:: FQPF8N60

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 11+

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Products Upload time: 2011-10-19

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Part Number:FQPF8N60
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Product Summary

The FQPF8N60 is a N-Channel enhancement mode power field effect transistor, which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of FQPF8N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF8N60 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF8N60 absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current - Continuous (TC = 25℃): 7.5 A, Continuous (TC = 100℃): 4.6 A; (3)Drain Current - Pulsed: 30 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 230 mJ; (6)Avalanche Current: 7.5 A; (7)Repetitive Avalanche Energy: 14.7 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 48 W, Derate above 25℃: 0.38 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF8N60 features: (1)7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 12 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.