(Hong Kong)
Product Summary
The IRF530 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRF530 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 14 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 10 A; (3)pulse drain current: 56 A; (4)power dissipation: 88 W; (5)linear derating factor: 0.59 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 69 mJ; (8)peak diode recovery dv/dt: 5.5 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.
Features
IRF530 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)175℃ operating temperarure; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRF530_R4941 |
Fairchild Semiconductor |
MOSFET USE 512-IRF530A |
Data Sheet |
Negotiable |
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 |
IRF5305L |
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MOSFET P-CH 55V 31A TO-262 |
Data Sheet |
Negotiable |
|
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 |
IRF5305S |
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MOSFET P-CH 55V 31A D2PAK |
Data Sheet |
Negotiable |
|
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|
IRF5305SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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 |
IRF5305STRL |
International Rectifier |
MOSFET P-CH 55V 31A D2PAK |
Data Sheet |
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IRF5305STRR |
|
MOSFET P-CH 55V 31A D2PAK |
Data Sheet |
Negotiable |
|
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IRF5305STRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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|
IRF530A |
Fairchild Semiconductor |
MOSFET TO-220 N-Ch A-FET |
Data Sheet |
Negotiable |
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