Product Summary

The IRF530 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRF530 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 14 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 10 A; (3)pulse drain current: 56 A; (4)power dissipation: 88 W; (5)linear derating factor: 0.59 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 69 mJ; (8)peak diode recovery dv/dt: 5.5 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.

Features

IRF530 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)175℃ operating temperarure; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.

Diagrams

IRF530 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF5305STRL
IRF5305STRL
International Rectifier
MOSFET P-CH 55V 31A D2PAK
Data Sheet
1-800: $0.92
IRF5305STRR
IRF5305STRR

MOSFET P-CH 55V 31A D2PAK
Data Sheet
Negotiable 
IRF5305STRRPBF
IRF5305STRRPBF
International Rectifier
MOSFET
Data Sheet
0-1: $1.43
1-25: $0.93
25-100: $0.67
100-250: $0.62
IRF530FP
IRF530FP
Other

Data Sheet
Negotiable 
IRF530NSTRLPBF
IRF530NSTRLPBF
International Rectifier
MOSFET MOSFT 100V 17A 90mOhm 24.7nC
Data Sheet
0-1: $1.41
1-25: $0.91
25-100: $0.66
100-250: $0.62
IRF530SPBF
IRF530SPBF
Vishay/Siliconix
MOSFET N-Chan 100V 14 Amp
Data Sheet
0-1: $1.09
1-10: $0.86
10-100: $0.77
100-250: $0.67
IRF530NPBF
IRF530NPBF
International Rectifier
MOSFET MOSFT 100V 17A 90mOhm 24.7nC
Data Sheet
0-1: $1.33
1-25: $0.81
25-100: $0.56
100-250: $0.53
IRF530NSTRRPBF
IRF530NSTRRPBF
International Rectifier
MOSFET
Data Sheet
0-800: $0.50
800-960: $0.50
960-1000: $0.48
1000-2000: $0.45