(Hong Kong)
Product Summary
The IRF530 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRF530 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 14 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 10 A; (3)pulse drain current: 56 A; (4)power dissipation: 88 W; (5)linear derating factor: 0.59 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 69 mJ; (8)peak diode recovery dv/dt: 5.5 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.
Features
IRF530 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)175℃ operating temperarure; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRF530 |
Vishay/Siliconix |
MOSFET N-Chan 100V 9.2 Amp |
Data Sheet |
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IRF530, SiHF530 |
Other |
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Data Sheet |
Negotiable |
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IRF5305 |
International Rectifier |
MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB |
Data Sheet |
Negotiable |
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IRF5305S/L |
Other |
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Data Sheet |
Negotiable |
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IRF5305SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF5305STRL |
International Rectifier |
MOSFET P-CH 55V 31A D2PAK |
Data Sheet |
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IRF5305STRLPBF |
International Rectifier |
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC |
Data Sheet |
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IRF530A |
Fairchild Semiconductor |
MOSFET TO-220 N-Ch A-FET |
Data Sheet |
Negotiable |
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