Product Summary
The IRF530 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRF530 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 14 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 10 A; (3)pulse drain current: 56 A; (4)power dissipation: 88 W; (5)linear derating factor: 0.59 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 69 mJ; (8)peak diode recovery dv/dt: 5.5 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.
Features
IRF530 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)175℃ operating temperarure; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IRF530 |
Vishay/Siliconix |
MOSFET N-Chan 100V 9.2 Amp |
Data Sheet |
|
|
|||||||||||||
IRF5305LPBF |
International Rectifier |
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC |
Data Sheet |
|
|
|||||||||||||
IRF5305STRLPBF |
International Rectifier |
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC |
Data Sheet |
|
|
|||||||||||||
IRF5305STRR |
MOSFET P-CH 55V 31A D2PAK |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF5305STRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
|
|
|||||||||||||
IRF530A |
Fairchild Semiconductor |
MOSFET TO-220 N-Ch A-FET |
Data Sheet |
Negotiable |
|
|||||||||||||
IRF530FP |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
IRF530NSTRLPBF |
International Rectifier |
MOSFET MOSFT 100V 17A 90mOhm 24.7nC |
Data Sheet |
|
|