Product Summary

The IRF530 is the third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRF530 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 14 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 10 A; (3)pulse drain current: 56 A; (4)power dissipation: 88 W; (5)linear derating factor: 0.59 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 69 mJ; (8)peak diode recovery dv/dt: 5.5 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.

Features

IRF530 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)175℃ operating temperarure; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.

Diagrams

IRF530 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF530
IRF530
Vishay/Siliconix
MOSFET N-Chan 100V 9.2 Amp
Data Sheet
0-730: $1.09
730-1000: $1.04
1000-2000: $1.02
2000-5000: $1.00
IRF530_R4941
IRF530_R4941
Fairchild Semiconductor
MOSFET USE 512-IRF530A
Data Sheet
Negotiable 
IRF5305
IRF5305
International Rectifier
MOSFET MOSFET, P-CHANNEL, -55V, -31A, 60 mOhm, 42 nC Qg, TO-220AB
Data Sheet
Negotiable 
IRF5305L
IRF5305L

MOSFET P-CH 55V 31A TO-262
Data Sheet
Negotiable 
IRF5305LPBF
IRF5305LPBF
International Rectifier
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
Data Sheet
0-1: $1.25
1-25: $0.81
25-100: $0.59
100-250: $0.55
IRF5305PBF
IRF5305PBF
International Rectifier
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
Data Sheet
0-1: $1.31
1-25: $0.85
25-100: $0.61
100-250: $0.58
IRF5305S
IRF5305S

MOSFET P-CH 55V 31A D2PAK
Data Sheet
Negotiable 
IRF5305S/L
IRF5305S/L
Other

Data Sheet
Negotiable