Product Summary

This STP65NF06 Power MOSFET is the latest development of STMicroelectronics unique single feature size. strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Parametrics

STP65NF06 absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 60 V; (2)VGS Gate- source voltage: ± 20 V; (3)ID Drain current (continuous) at TC = 25℃: 60 A; (4)ID Drain current (continuous) at TC = 100℃: 42 A; (5)IDM(1) Drain current (pulsed) 240 A; (6)dv/dt Peak diode recovery voltage slope 10 V/ns; (7)EAS(3) Single pulse avalanche energy: 390 mJ; (8)Tstg Storage temperature: -55 to 175 ℃.

Features

STP65NF06 features: (1)Standard level gate drive; (2)100% avalanche tested; (3)Switching application.

Diagrams

STP65NF06 Internal schematic diagram

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