Product Summary

The IRF9530 is third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRF9530 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: -12 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: -8.2 A; (3)pulse drain current: -48 A; (4)power dissipation: 88 W; (5)linear derating factor: 0.59 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 400 mJ; (8)peak diode recovery dv/dt: -5.5 V/ns; (9)operating junction and storage temperature range: -55 to +175℃.

Features

IRF9530 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)175℃ operating temperature; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements.

Diagrams

IRF9530 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF9530
IRF9530
Vishay/Siliconix
MOSFET -100V Single P-Channel HEXFET
Data Sheet
0-1: $1.89
1-10: $1.54
10-100: $1.41
100-250: $1.26
IRF9530, SiHF9530
IRF9530, SiHF9530
Other

Data Sheet
Negotiable 
IRF9530_R4941
IRF9530_R4941
Fairchild Semiconductor
MOSFET TO-220AB P-Ch Power
Data Sheet
Negotiable 
IRF9530L
IRF9530L

MOSFET P-CH 100V 12A TO-262
Data Sheet
0-300: $1.02
IRF9530-220M
IRF9530-220M
Other

Data Sheet
Negotiable 
IRF9530N
IRF9530N
International Rectifier
MOSFET P-CH 100V 14A TO-220AB
Data Sheet
1-400: $0.64
IRF9530NSTRLPBF
IRF9530NSTRLPBF
International Rectifier
MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC
Data Sheet
0-1: $1.54
1-25: $0.99
25-100: $0.71
100-250: $0.67
IRF9530NPBF
IRF9530NPBF
International Rectifier
MOSFET MOSFT PCh -100V -14A 200mOhm 38.7nC
Data Sheet
0-1: $1.38
1-25: $0.85
25-100: $0.58
100-250: $0.55