Product Summary

The FQPF12N60 is a N-Channel enhancement mode power field effect transistor, which is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF12N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF12N60 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF12N60 absolute maximum ratings: (1)Drain-Source Voltage: 600 V; (2)Drain Current - Continuous (TC = 25℃):9.5 A, Continuous (TC = 100℃): 3.3 A; (3)Drain Current - Pulsed: 38 A; (4)Gate-Source Voltage: ± 30 V; (5)Single Pulsed Avalanche Energy: 700 mJ; (6)Avalanche Current: 9.5 A; (7)Repetitive Avalanche Energy: 15.6 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 50 W, Derate above 25℃: 0.4 W/℃; (10)Operating and Storage Temperature Range: -55 to +150 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.

Features

FQPF12N60 features: (1)9.5 A, 600V, RDS(on) = 0.73 Ω@VGS = 10 V; (2)Low gate charge ( typical 44nC); (3)Low Crss ( typical 18pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQPF12N60 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQPF12N60
FQPF12N60
Fairchild Semiconductor
MOSFET
Data Sheet
Negotiable 
FQPF12N60C
FQPF12N60C
Fairchild Semiconductor
MOSFET 600V N-Ch Q-FET advance C-Series
Data Sheet
Negotiable 
FQPF12N60T
FQPF12N60T
Fairchild Semiconductor
MOSFET 600V N-Channel QFET
Data Sheet
Negotiable 
FQPF12N60CT
FQPF12N60CT
Fairchild Semiconductor
MOSFET N-CH/600V/12A QFET C-Series
Data Sheet
Negotiable