(Hong Kong)
Product Summary
The IRF640 is third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRF640 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 18 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 11 A; (3)pulse drain current: 72 A; (4)power dissipation: 125 W; (5)linear derating factor: 1.0 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 13 mJ; (8)peak diode recovery dv/dt: 5.0 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.
Features
IRF640 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF640 |
Vishay/Siliconix |
MOSFET N-Chan 200V 18 Amp |
Data Sheet |
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 |
IRF640, SiHF640 |
Other |
|
Data Sheet |
Negotiable |
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 |
IRF640,127 |
|
MOSFET N-CH 200V 16A TO-220AB |
Data Sheet |
Negotiable |
|
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|
IRF640A |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF640B |
Other |
|
Data Sheet |
Negotiable |
|
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|
IRF640B_FP001_Q |
Fairchild Semiconductor |
MOSFET 200V Single |
Data Sheet |
Negotiable |
|
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|
IRF640LPBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 18 Amp |
Data Sheet |
Negotiable |
|
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|
IRF640N |
|
MOSFET N-CH 200V 18A TO-220AB |
Data Sheet |
Negotiable |
|
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