Product Summary

The IRF640 is third generation HEXFET from international rectifier, which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

IRF640 absolute maximum ratings: (1)ID@TC=25℃, continuous drain current, VGS@10V: 18 A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 11 A; (3)pulse drain current: 72 A; (4)power dissipation: 125 W; (5)linear derating factor: 1.0 W/℃; (6)gate-to-source voltage: ±20 V; (7)single pulse avalanche energy: 13 mJ; (8)peak diode recovery dv/dt: 5.0 V/ns; (9)operating junction and storage temperature range: -55 to +150℃.

Features

IRF640 features: (1)dynamic dv/dt rating; (2)repetitive avalenche rated; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.

Diagrams

IRF640 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF640
IRF640
Vishay/Siliconix
MOSFET N-Chan 200V 18 Amp
Data Sheet
0-1: $3.01
1-10: $2.47
10-100: $2.21
100-250: $2.08
IRF640, SiHF640
IRF640, SiHF640
Other

Data Sheet
Negotiable 
IRF640,127
IRF640,127

MOSFET N-CH 200V 16A TO-220AB
Data Sheet
Negotiable 
IRF640_R4941
IRF640_R4941
Fairchild Semiconductor
MOSFET TO-220 N-CH 200V 18A
Data Sheet
Negotiable 
IRF640A
IRF640A
Other

Data Sheet
Negotiable 
IRF640B
IRF640B
Other

Data Sheet
Negotiable 
IRF640B_FP001
IRF640B_FP001
Fairchild Semiconductor
MOSFET 200V Single
Data Sheet
Negotiable 
IRF640B_FP001_Q
IRF640B_FP001_Q
Fairchild Semiconductor
MOSFET 200V Single
Data Sheet
Negotiable